Η εικόνα μπορεί να είναι αναπαράσταση.
Δείτε τις προδιαγραφές για λεπτομέρειες προϊόντος.
BD246-S

BD246-S

Product Overview

Category: Semiconductor
Use: Power transistor for general-purpose amplifier and switching applications
Characteristics: High current capability, low collector-emitter saturation voltage
Package: TO-218
Essence: Reliable and efficient power transistor
Packaging/Quantity: Typically sold in packs of 10

Specifications

  • Collector-Emitter Voltage (VCEO): 100V
  • Collector-Base Voltage (VCBO): 100V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 6A
  • Total Power Dissipation (PT): 65W
  • Transition Frequency (fT): 3MHz

Detailed Pin Configuration

  1. Base (B)
  2. Collector (C)
  3. Emitter (E)

Functional Features

  • High current gain
  • Low saturation voltage
  • Fast switching speed

Advantages and Disadvantages

Advantages: - High current capability - Low collector-emitter saturation voltage - Reliable performance

Disadvantages: - Limited maximum voltage and current ratings compared to some alternative models

Working Principles

The BD246-S operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its three terminals to amplify or switch electronic signals.

Detailed Application Field Plans

The BD246-S is commonly used in audio amplifiers, power supplies, and general-purpose switching circuits due to its high current capability and low saturation voltage.

Detailed and Complete Alternative Models

  • BD245-S
  • BD247-S
  • BD249-S

This completes the English editing encyclopedia entry structure format for BD246-S, providing comprehensive information about the product's category, use, characteristics, package, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Καταγράψτε 10 συνήθεις ερωτήσεις και απαντήσεις που σχετίζονται με την εφαρμογή του BD246-S σε τεχνικές λύσεις

  1. What is BD246-S?

    • BD246-S is a silicon NPN power transistor designed for use in general-purpose amplifier and switching applications.
  2. What are the key features of BD246-S?

    • The key features of BD246-S include high current capability, low saturation voltage, and excellent linearity.
  3. What are the typical applications of BD246-S?

    • Typical applications of BD246-S include audio amplifiers, power supply circuits, and general switching applications.
  4. What is the maximum collector current of BD246-S?

    • The maximum collector current of BD246-S is 10A.
  5. What is the maximum collector-emitter voltage of BD246-S?

    • The maximum collector-emitter voltage of BD246-S is 100V.
  6. What is the typical hFE (DC current gain) of BD246-S?

    • The typical hFE of BD246-S is 20-70 at IC = 4A.
  7. What is the thermal resistance of BD246-S?

    • The thermal resistance of BD246-S is typically 2.5°C/W.
  8. Can BD246-S be used in high-power amplifier designs?

    • Yes, BD246-S can be used in high-power amplifier designs due to its high current capability and low saturation voltage.
  9. Is BD246-S suitable for switching applications?

    • Yes, BD246-S is suitable for switching applications due to its fast switching speed and high current handling capability.
  10. Are there any specific precautions to consider when using BD246-S in technical solutions?

    • It is important to ensure proper heat sinking and thermal management when using BD246-S in high-power applications to prevent overheating and ensure reliable operation.