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BD649-S
Product Overview
Category: Semiconductor
Use: Amplifier and Switching Applications
Characteristics: High voltage, high current
Package: TO-220
Essence: NPN Epitaxial Silicon Transistor
Packaging/Quantity: Bulk packaging, 50 pieces per pack
Specifications
- Collector-Emitter Voltage (VCEO): 80V
- Collector-Base Voltage (VCBO): 80V
- Emitter-Base Voltage (VEBO): 5V
- Collector Current (IC): 4A
- Power Dissipation (PD): 40W
- Transition Frequency (FT): 30MHz
- Operating Temperature Range: -65°C to 150°C
Detailed Pin Configuration
- Base (B)
- Collector (C)
- Emitter (E)
Functional Features
- High voltage capability
- Fast switching speed
- Low saturation voltage
Advantages
- Suitable for high power amplification and switching applications
- Reliable and durable
- Wide operating temperature range
Disadvantages
- May require heat sink for certain applications
- Sensitive to electrostatic discharge
Working Principles
The BD649-S is designed as an NPN epitaxial silicon transistor, allowing it to amplify and switch electronic signals. When a small current flows into the base terminal, it controls a larger current flowing between the collector and emitter terminals, enabling signal amplification and switching.
Detailed Application Field Plans
The BD649-S is commonly used in audio amplifiers, power supply circuits, motor control, and electronic switches. Its high voltage and current capabilities make it suitable for various industrial and consumer electronic applications.
Detailed and Complete Alternative Models
- BD649
- BD649A
- BD649B
- BD649C
In summary, the BD649-S is a versatile NPN transistor with high voltage and current capabilities, making it suitable for a wide range of amplification and switching applications in the electronics industry.
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Καταγράψτε 10 συνήθεις ερωτήσεις και απαντήσεις που σχετίζονται με την εφαρμογή του BD649-S σε τεχνικές λύσεις
What is the BD649-S transistor used for?
- The BD649-S transistor is commonly used for high-power amplification and switching applications.
What are the key specifications of the BD649-S transistor?
- The BD649-S transistor typically has a collector current rating of 4A, a collector-emitter voltage rating of 80V, and a power dissipation of 36W.
Can the BD649-S be used in audio amplifier circuits?
- Yes, the BD649-S transistor is suitable for use in audio amplifier circuits due to its high power handling capabilities.
Is the BD649-S suitable for motor control applications?
- Yes, the BD649-S can be used in motor control applications where high current and voltage requirements are necessary.
What are the typical operating conditions for the BD649-S transistor?
- The BD649-S transistor operates under standard conditions with a temperature range of -65°C to 150°C and a maximum junction temperature of 150°C.
Does the BD649-S require a heat sink for operation?
- Yes, due to its power dissipation characteristics, the BD649-S may require a heat sink for efficient operation, especially in high-power applications.
Can the BD649-S be used in voltage regulator circuits?
- The BD649-S can be utilized in voltage regulator circuits, particularly in scenarios requiring high current regulation.
What are the common package types available for the BD649-S transistor?
- The BD649-S transistor is commonly available in a TO-220 package, which allows for easy mounting and heat dissipation.
Are there any recommended complementary transistors to use with the BD649-S?
- Complementary transistors such as BD650-S can be used in conjunction with the BD649-S for push-pull amplifier configurations.
Where can I find detailed application notes for using the BD649-S in technical solutions?
- Detailed application notes for the BD649-S can be found in the manufacturer's datasheet, which provides comprehensive information on circuit design and usage guidelines.