BFN18E6327HTSA1 Product Overview
Product Category:
The BFN18E6327HTSA1 belongs to the category of high-speed transistors.
Basic Information Overview: - Use: The BFN18E6327HTSA1 is used as a high-speed switching transistor in various electronic circuits. - Characteristics: It exhibits high switching speed, low on-state resistance, and low power dissipation. - Package: The BFN18E6327HTSA1 comes in a small SOT343 package, suitable for compact circuit designs. - Essence: This transistor is essential for achieving fast switching operations in electronic devices. - Packaging/Quantity: It is typically available in reels containing a specific quantity, such as 3000 units per reel.
Specifications: - Type: NPN - Collector-Base Voltage (V_CBO): 32V - Collector Current (I_C): 100mA - Power Dissipation (P_tot): 225mW - Transition Frequency (f_T): 6GHz
Detailed Pin Configuration: The BFN18E6327HTSA1 has three pins: Collector (C), Base (B), and Emitter (E). The pin configuration is as follows: - C: Collector - B: Base - E: Emitter
Functional Features: - High switching speed - Low power dissipation - Small package size for space-constrained designs
Advantages: - Suitable for high-frequency applications - Compact package for miniaturized designs - Low power consumption
Disadvantages: - Limited maximum collector current compared to some other transistors - Higher cost compared to standard-speed transistors
Working Principles: The BFN18E6327HTSA1 operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its terminals to achieve high-speed switching.
Detailed Application Field Plans: - RF amplifiers - Oscillators - Switching circuits in communication systems - High-frequency signal processing
Detailed and Complete Alternative Models: - BFR93AW - BFT66 - BFR106
In conclusion, the BFN18E6327HTSA1 high-speed transistor offers significant advantages in high-frequency applications, despite its limitations in maximum collector current and cost. Its compact package and high switching speed make it an ideal choice for miniaturized electronic designs requiring fast signal processing.
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