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IXFN200N10P
Product Overview
Category:
The IXFN200N10P belongs to the category of power MOSFETs.
Use:
It is commonly used in power electronics applications such as motor control, power supplies, and inverters.
Characteristics:
- High voltage capability
- Low on-state resistance
- Fast switching speed
- High reliability
Package:
The IXFN200N10P is typically available in a TO-268 package.
Essence:
This power MOSFET is essential for efficient power management and control in various electronic systems.
Packaging/Quantity:
It is usually supplied in reels or tubes, with quantities varying based on manufacturer and distributor specifications.
Specifications
- Voltage Rating: 1000V
- Current Rating: 200A
- On-State Resistance: 0.01 ohms
- Gate-Source Voltage (Max): ±20V
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IXFN200N10P typically has three pins: 1. Drain (D) 2. Source (S) 3. Gate (G)
Functional Features
- High voltage capability allows for use in high-power applications.
- Low on-state resistance minimizes power loss and heat generation.
- Fast switching speed enables efficient control of power flow.
Advantages
- High voltage rating suitable for demanding applications.
- Low on-state resistance leads to improved efficiency.
- Fast switching speed enhances overall performance.
Disadvantages
- Higher cost compared to standard MOSFETs.
- Requires careful handling and protection against static discharge.
Working Principles
The IXFN200N10P operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IXFN200N10P is widely used in the following applications: - Motor drives for industrial equipment - Uninterruptible power supplies (UPS) - Renewable energy systems - Electric vehicle powertrains
Detailed and Complete Alternative Models
Some alternative models to the IXFN200N10P include: - IRFP4668PbF - STW75N10 - FDPF33N25T
In conclusion, the IXFN200N10P power MOSFET offers high voltage capability, low on-state resistance, and fast switching speed, making it an essential component in various power electronics applications.
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What is the maximum drain-source voltage of the IXFN200N10P?
- The maximum drain-source voltage of the IXFN200N10P is 1000V.
What is the continuous drain current rating of the IXFN200N10P?
- The continuous drain current rating of the IXFN200N10P is 200A.
Can the IXFN200N10P be used in high-frequency switching applications?
- Yes, the IXFN200N10P is suitable for high-frequency switching due to its low gate charge and fast switching characteristics.
What is the on-state resistance (RDS(on)) of the IXFN200N10P?
- The on-state resistance of the IXFN200N10P is typically 0.009 ohms.
Is the IXFN200N10P suitable for use in motor drive applications?
- Yes, the IXFN200N10P is commonly used in motor drive applications due to its high current handling capability.
Does the IXFN200N10P require a heat sink for operation?
- Yes, a heat sink is recommended for the IXFN200N10P to ensure proper thermal management, especially in high-current applications.
What type of package does the IXFN200N10P come in?
- The IXFN200N10P is available in a TO-264 package, which provides good thermal performance.
Can the IXFN200N10P be used in parallel to increase current handling capacity?
- Yes, the IXFN200N10P can be used in parallel to increase the overall current handling capacity in a circuit.
What is the maximum junction temperature of the IXFN200N10P?
- The maximum junction temperature of the IXFN200N10P is 175°C.
Are there any recommended gate driver ICs for driving the IXFN200N10P?
- Yes, several gate driver ICs are compatible with the IXFN200N10P, such as the IR2110 and IR2104, which provide efficient and reliable gate driving.