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IXFN210N30X3

IXFN210N30X3

Product Overview

Category

The IXFN210N30X3 belongs to the category of power MOSFETs.

Use

It is used for high-power switching applications in various electronic circuits and systems.

Characteristics

  • High voltage and current handling capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate drive power requirement

Package

The IXFN210N30X3 is typically available in a TO-268 package.

Essence

This power MOSFET is essential for efficient power management and control in electronic devices and systems.

Packaging/Quantity

The standard packaging for the IXFN210N30X3 includes a quantity of 50 units per tube.

Specifications

  • Voltage Rating: 300V
  • Current Rating: 210A
  • RDS(ON): 0.042 Ohms
  • Gate Threshold Voltage: 2.5V
  • Total Gate Charge: 180nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IXFN210N30X3 features a standard pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage and current handling capacity
  • Low on-state resistance for minimal power loss
  • Fast switching speed for efficient operation
  • Low gate drive power requirement for improved energy efficiency

Advantages

  • Suitable for high-power applications
  • Efficient power management
  • Fast and reliable switching performance
  • Low power dissipation

Disadvantages

  • Higher cost compared to lower power MOSFETs
  • May require additional heat dissipation measures in high-power applications

Working Principles

The IXFN210N30X3 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a sufficient gate voltage is applied, the MOSFET allows a high current to pass through with minimal resistance.

Detailed Application Field Plans

The IXFN210N30X3 is commonly used in the following applications: - Switching power supplies - Motor control systems - Inverters and converters - High-power amplifiers - Renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the IXFN210N30X3 include: - IXFN240N10T - IXFN170N10T - IXFN200N20T - IXFN220N15T

In conclusion, the IXFN210N30X3 power MOSFET offers high-performance characteristics suitable for various high-power switching applications. Its efficient power management capabilities and fast switching speed make it an ideal choice for demanding electronic systems and circuits.

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Καταγράψτε 10 συνήθεις ερωτήσεις και απαντήσεις που σχετίζονται με την εφαρμογή του IXFN210N30X3 σε τεχνικές λύσεις

  1. What is the maximum voltage rating of IXFN210N30X3?

    • The maximum voltage rating of IXFN210N30X3 is 300V.
  2. What is the maximum current rating of IXFN210N30X3?

    • The maximum current rating of IXFN210N30X3 is 210A.
  3. What type of package does IXFN210N30X3 come in?

    • IXFN210N30X3 comes in a TO-264 package.
  4. What are the typical applications for IXFN210N30X3?

    • IXFN210N30X3 is commonly used in motor drives, inverters, and power supplies.
  5. What is the on-state resistance of IXFN210N30X3?

    • The on-state resistance of IXFN210N30X3 is typically 0.065 ohms.
  6. Does IXFN210N30X3 require a heat sink for operation?

    • Yes, IXFN210N30X3 typically requires a heat sink for efficient operation.
  7. What is the maximum junction temperature for IXFN210N30X3?

    • The maximum junction temperature for IXFN210N30X3 is 175°C.
  8. Is IXFN210N30X3 suitable for high-frequency switching applications?

    • Yes, IXFN210N30X3 is suitable for high-frequency switching applications.
  9. Does IXFN210N30X3 have built-in protection features?

    • IXFN210N30X3 may have built-in protection features such as overcurrent protection.
  10. What are the recommended gate drive voltage levels for IXFN210N30X3?

    • The recommended gate drive voltage levels for IXFN210N30X3 typically range from 15V to 20V.