Category: Power MOSFET
Use: Switching applications
Characteristics: High voltage, low on-resistance
Package: TO-247
Essence: Power transistor for high-voltage applications
Packaging/Quantity: Typically sold in reels of 50 or 100 units
The IXTH13N80 follows the standard pin configuration for a TO-247 package: 1. Gate (G) 2. Drain (D) 3. Source (S)
Advantages: - High voltage rating - Low on-resistance - Fast switching speed
Disadvantages: - Relatively high gate threshold voltage - Higher cost compared to lower voltage MOSFETs
The IXTH13N80 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a sufficient voltage is applied to the gate, the MOSFET allows current to flow through it, making it suitable for switching applications.
The IXTH13N80 is commonly used in: - Power supplies - Motor control - Inverters - Industrial equipment
In conclusion, the IXTH13N80 is a high-voltage power MOSFET designed for switching applications, offering low on-resistance and high voltage ratings. It finds applications in various fields such as power supplies, motor control, and industrial equipment. While it has advantages in its performance, it may have limitations in terms of cost and gate threshold voltage. There are alternative models available with varying specifications to suit different application requirements.
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What is IXTH13N80?
What are the key features of IXTH13N80?
In what technical solutions can IXTH13N80 be used?
What is the maximum voltage and current rating of IXTH13N80?
How does IXTH13N80 compare to other IGBTs in its class?
What are the thermal characteristics of IXTH13N80?
Are there any application notes or reference designs available for using IXTH13N80?
Can IXTH13N80 be used in parallel configurations for higher current applications?
What are the typical switching frequencies supported by IXTH13N80?
Where can I find detailed specifications and application information for IXTH13N80?