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IXTK140N30P
Product Overview
Category:
The IXTK140N30P belongs to the category of power MOSFETs.
Use:
It is used for high-power switching applications in various electronic circuits and systems.
Characteristics:
- High voltage and current handling capability
- Low on-state resistance
- Fast switching speed
- Low gate drive power requirement
Package:
The IXTK140N30P is typically available in a TO-264 package.
Essence:
This MOSFET is essential for efficient power management and control in electronic devices and systems.
Packaging/Quantity:
It is usually packaged individually and comes in reels or tubes, depending on the manufacturer. The quantity per package varies based on the supplier's specifications.
Specifications
- Voltage Rating: 300V
- Current Rating: 140A
- On-State Resistance: 0.04 ohms
- Gate Threshold Voltage: 2.5V
- Maximum Power Dissipation: 625W
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The IXTK140N30P typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage and current handling capacity
- Low conduction losses
- Fast switching speed
- Enhanced thermal performance
Advantages
- Suitable for high-power applications
- Low on-state resistance leads to reduced power dissipation
- Fast switching speed enables efficient operation in switching circuits
Disadvantages
- Higher gate threshold voltage compared to some other MOSFETs
- May require careful consideration of thermal management due to high power dissipation
Working Principles
The IXTK140N30P operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IXTK140N30P is commonly used in the following applications: - Switch-mode power supplies - Motor control systems - Inverters and converters - Electronic load switches - Automotive power distribution systems
Detailed and Complete Alternative Models
Some alternative models to the IXTK140N30P include: - IRFP4668PbF - STP200N3LL - FDPF33N25T
In conclusion, the IXTK140N30P is a high-performance power MOSFET with excellent voltage and current handling capabilities, making it suitable for a wide range of high-power switching applications. Its low on-state resistance and fast switching speed contribute to its efficiency in power management and control.
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Καταγράψτε 10 συνήθεις ερωτήσεις και απαντήσεις που σχετίζονται με την εφαρμογή του IXTK140N30P σε τεχνικές λύσεις
Sure, here are 10 common questions and answers related to the application of IXTK140N30P in technical solutions:
Question: What is the maximum drain-source voltage for IXTK140N30P?
Answer: The maximum drain-source voltage for IXTK140N30P is 300V.Question: What is the continuous drain current rating for IXTK140N30P?
Answer: The continuous drain current rating for IXTK140N30P is 140A.Question: Can IXTK140N30P be used in high-power applications?
Answer: Yes, IXTK140N30P is suitable for high-power applications due to its high current and voltage ratings.Question: What type of package does IXTK140N30P come in?
Answer: IXTK140N30P comes in a TO-264 package.Question: Is IXTK140N30P suitable for switching applications?
Answer: Yes, IXTK140N30P is designed for high-speed switching applications.Question: What is the on-state resistance of IXTK140N30P?
Answer: The on-state resistance of IXTK140N30P is typically 0.045 ohms.Question: Can IXTK140N30P be used in automotive applications?
Answer: Yes, IXTK140N30P is commonly used in automotive power systems and motor control applications.Question: Does IXTK140N30P require a heat sink for operation?
Answer: Yes, IXTK140N30P may require a heat sink to dissipate heat in high-power applications.Question: What is the gate-source threshold voltage for IXTK140N30P?
Answer: The gate-source threshold voltage for IXTK140N30P is typically 4V.Question: Is IXTK140N30P suitable for use in industrial power supplies?
Answer: Yes, IXTK140N30P is well-suited for industrial power supply and distribution applications.