JS28F064M29EWTA

Product Overview

Category

JS28F064M29EWTA belongs to the category of Flash Memory.

Use

It is primarily used for data storage in electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High-speed read and write operations: Allows for quick access to stored data.
• Large storage capacity: Can store a significant amount of data.
• Compact size: Takes up minimal space in electronic devices.

Package

JS28F064M29EWTA is available in a small form factor package, making it suitable for integration into various electronic devices.

Essence

The essence of JS28F064M29EWTA lies in its ability to provide reliable and high-performance data storage solutions for electronic devices.

Packaging/Quantity

This product is typically packaged in trays or reels, with each containing a specific quantity of JS28F064M29EWTA units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Storage Capacity: 64 megabits (8 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: Up to 100,000 cycles

Detailed Pin Configuration

The pin configuration of JS28F064M29EWTA is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. DQ0-DQ15: Data input/output lines
5. WE#: Write enable
6. CE#: Chip enable
7. OE#: Output enable
8. RP#/BYTE#: Reset/byte enable
9. WP#/ACC: Write protect/acceleration
10. RY/BY#: Ready/busy

Functional Features

• High-speed read and write operations
• Sector erase and byte programming capabilities
• Built-in error correction code (ECC) for data integrity
• Automatic sleep mode to conserve power
• Hardware and software protection mechanisms

Advantages and Disadvantages

Advantages

• Fast data access and transfer speeds
• Large storage capacity
• Compact size
• Reliable and durable
• Low power consumption

Disadvantages

• Limited erase/write cycles
• Higher cost compared to other memory technologies
• Susceptible to data loss in case of power failure

Working Principles

JS28F064M29EWTA utilizes a floating gate transistor technology called NOR flash memory. It stores data by trapping electric charge within the floating gate, which alters the transistor's conductive properties. This allows for non-volatile storage of binary data.

Detailed Application Field Plans

JS28F064M29EWTA finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Embedded systems - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to JS28F064M29EWTA include: - S29GL064S90TFI010 - MT29F64G08CBAAAWP-IT:E - W25Q64JVZPIQ - MX25L6406EM2I-12G - AT45DB641E-SHN2B-T

These alternative models offer similar functionality and can be used as replacements depending on specific requirements.

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