Micron Technology Inc.
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MT29F64G08AECABH1-10:A

MT29F64G08AECABH1-10:A

Basic Information Overview

Category: Memory Device
Use: Data storage and retrieval
Characteristics: High capacity, fast access speed, non-volatile
Package: BGA (Ball Grid Array)
Essence: NAND Flash memory
Packaging/Quantity: Single unit

Specifications

  • Capacity: 64GB
  • Organization: 8Gb x 8
  • Voltage Supply: 2.7V - 3.6V
  • Access Time: 50ns (max)
  • Interface: Parallel
  • Operating Temperature: -40°C to +85°C
  • Package Dimensions: 14mm x 18mm

Detailed Pin Configuration

The MT29F64G08AECABH1-10:A has a total of 48 pins arranged in a specific configuration. The pinout is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. A24
  27. A25
  28. ALE
  29. CLE
  30. RE#
  31. WE#
  32. WP#
  33. R/B#
  34. DQ0
  35. DQ1
  36. DQ2
  37. DQ3
  38. DQ4
  39. DQ5
  40. DQ6
  41. DQ7
  42. VSS
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. VCC

Functional Features

  • High-speed data transfer
  • Reliable and durable storage
  • Low power consumption
  • Error correction capabilities
  • Wear-leveling algorithms for extended lifespan

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast access speed - Non-volatile memory (retains data even without power) - Compact package size - Suitable for various applications

Disadvantages: - Limited write endurance - Higher cost compared to other memory technologies - Requires specific drivers and controllers for optimal performance

Working Principles

The MT29F64G08AECABH1-10:A is based on NAND Flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can hold multiple bits of information, allowing for high-density storage. The data is accessed by applying appropriate voltages to the address lines and using control signals to read or write data.

Detailed Application Field Plans

The MT29F64G08AECABH1-10:A is widely used in various electronic devices and systems that require reliable and high-capacity data storage. Some common application fields include:

  1. Solid-state drives (SSDs)
  2. Portable media players
  3. Digital cameras
  4. Smartphones and tablets
  5. Industrial automation systems
  6. Automotive electronics
  7. Gaming consoles

Detailed and Complete Alternative Models

  1. Samsung K9K8G08U0B
  2. Toshiba TH58NVG6D2FLA89
  3. Micron MT29F64G08CBABA
  4. Intel JS29F64G08CAMD1
  5. Hynix H27U8G8F2ETR

These alternative models offer similar specifications and functionality to the MT29F64G08AECABH1-10:A, providing options for different sourcing and compatibility requirements.

In conclusion, the MT29F64G08AECABH1-10:A is a high-capacity NAND Flash memory device with fast access speed and reliable data storage capabilities. It finds applications in various electronic devices and systems, offering a compact package size and excellent performance.

Καταγράψτε 10 συνήθεις ερωτήσεις και απαντήσεις που σχετίζονται με την εφαρμογή του MT29F64G08AECABH1-10:A σε τεχνικές λύσεις

  1. Question: What is the capacity of the MT29F64G08AECABH1-10:A memory chip?
    Answer: The MT29F64G08AECABH1-10:A has a capacity of 64 gigabits (8 gigabytes).

  2. Question: What is the voltage range supported by this memory chip?
    Answer: The MT29F64G08AECABH1-10:A operates at a voltage range of 2.7V to 3.6V.

  3. Question: What is the interface used for communication with this memory chip?
    Answer: The MT29F64G08AECABH1-10:A uses a standard NAND Flash interface.

  4. Question: Can this memory chip be used in industrial applications?
    Answer: Yes, the MT29F64G08AECABH1-10:A is designed for industrial-grade applications and can withstand harsh operating conditions.

  5. Question: What is the maximum data transfer rate supported by this memory chip?
    Answer: The MT29F64G08AECABH1-10:A supports a maximum data transfer rate of 50 megabytes per second.

  6. Question: Does this memory chip support hardware encryption?
    Answer: No, the MT29F64G08AECABH1-10:A does not have built-in hardware encryption capabilities.

  7. Question: Can this memory chip be used as a boot device?
    Answer: Yes, the MT29F64G08AECABH1-10:A can be used as a boot device in various embedded systems.

  8. Question: What is the endurance rating of this memory chip?
    Answer: The MT29F64G08AECABH1-10:A has an endurance rating of 10,000 program/erase cycles.

  9. Question: Is this memory chip compatible with other NAND Flash devices?
    Answer: Yes, the MT29F64G08AECABH1-10:A is compatible with other standard NAND Flash devices.

  10. Question: What is the operating temperature range for this memory chip?
    Answer: The MT29F64G08AECABH1-10:A can operate within a temperature range of -40°C to +85°C.