MT29F64G08AFAAAWP-IT:A

Product Overview

Category

MT29F64G08AFAAAWP-IT:A belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F64G08AFAAAWP-IT:A offers a storage capacity of 64 gigabytes.
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F64G08AFAAAWP-IT:A comes in a compact package, enabling easy integration into various electronic devices.

Package and Quantity

The MT29F64G08AFAAAWP-IT:A NAND flash memory is typically packaged in a small form factor, such as a surface-mount device (SMD) package. The exact package dimensions may vary depending on the manufacturer. It is commonly available in quantities of one or more units per package.

Specifications

• Storage Capacity: 64 gigabytes (GB)
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 100 megabytes per second (MB/s)
• Endurance: Up to 10,000 program/erase cycles
• Data Retention: Up to 10 years

Pin Configuration

The detailed pin configuration of MT29F64G08AFAAAWP-IT:A is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ7: Data input/output
8. R/B: Ready/Busy status
9. CLE: Command latch enable
10. ALE: Address latch enable

Please refer to the product datasheet for a complete pin configuration diagram.

Functional Features

• Page Program: Allows data to be written in page-sized increments.
• Block Erase: Enables erasing of data in block-sized units.
• Random Access: Provides random access to any memory location, allowing for efficient data retrieval.
• Error Correction Code (ECC): Implements ECC algorithms to detect and correct errors during data read/write operations.
• Wear Leveling: Distributes data evenly across memory cells to extend the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate allows for quick access to stored information.
• Low power consumption makes it suitable for battery-powered devices.
• Compact package facilitates integration into various electronic devices.
• Reliable performance with advanced error correction techniques.

Disadvantages

• Limited endurance compared to other non-volatile memory technologies.
• Relatively higher cost per gigabyte compared to traditional hard disk drives.

Working Principles

MT29F64G08AFAAAWP-IT:A utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of data using a floating-gate transistor. When writing data, an electrical charge is applied to the floating gate, altering its state and storing the desired information. Reading data involves detecting the charge level in each memory cell to determine the stored data.

Detailed Application Field Plans

MT29F64G08AFAAAWP-IT:A finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Alternative Models

Some alternative models that offer similar functionality to MT29F64G08AFAAAWP-IT:A include: - Samsung K9K8G08U0D - Micron MT29F64G08CBABA - Toshiba TH58NVG6D2FLA89

These models may have slight variations in specifications and pin configuration, so it is important to refer to their respective datasheets for detailed information.

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