MT29F64G08CBCABH1-12:A

Basic Information Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile memory
  • High capacity (64GB)
  • NAND Flash technology
• Package: BGA (Ball Grid Array)
• Essence: Reliable and high-performance data storage solution
• Packaging/Quantity: Individually packaged, typically sold in bulk quantities

Specifications

• Model: MT29F64G08CBCABH1-12:A
• Capacity: 64GB
• Interface: Parallel
• Voltage: 3.3V
• Speed: 12ns
• Organization: 8Gb x 8
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The MT29F64G08CBCABH1-12:A has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CLE
30. RE#
31. WE#
32. WP#
33. R/B#
34. CE#
35. BYTE#
36. NC
37. NC
38. NC
39. NC
40. NC
41. GND
42. DQ0
43. DQ1
44. DQ2
45. DQ3
46. DQ4
47. DQ5
48. DQ6

Functional Features

• High-speed data transfer
• Reliable and durable storage solution
• Error correction and detection mechanisms
• Wear-leveling algorithms for extended lifespan
• Block management for efficient data organization

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer speeds
• Non-volatile memory retains data even without power
• Suitable for various applications requiring high-capacity storage

Disadvantages

• Relatively higher cost compared to other memory options
• Limited endurance due to the finite number of write cycles

Working Principles

The MT29F64G08CBCABH1-12:A utilizes NAND Flash technology for data storage. It consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of data, allowing for high-density storage. The device uses electrical charges to represent binary data (0s and 1s). When reading or writing data, voltages are applied to specific pins to access and modify the stored information.

Detailed Application Field Plans

The MT29F64G08CBCABH1-12:A is widely used in various electronic devices and systems that require large-capacity data storage. Some common application fields include: - Solid-state drives (SSDs) - Embedded systems - Industrial automation - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

• MT29F64G08CBAAA
• MT29F64G08CBABB
• MT29F64G08CBABC
• MT29F64G08CBABD
• MT29F64G08CBABE

These alternative models offer similar specifications and functionality, providing flexibility in choosing the most suitable memory device for specific applications.

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