MT47H128M16RT-25E:C TR

Product Overview

Category

MT47H128M16RT-25E:C TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed operation: The MT47H128M16RT-25E:C TR offers fast data transfer rates, enabling efficient processing of large amounts of information.
• Large storage capacity: With a capacity of 128 megabits (16 megabytes), this product provides ample space for storing various types of data.
• Low power consumption: The MT47H128M16RT-25E:C TR is designed to minimize energy usage, making it suitable for battery-powered devices.
• Reliable performance: This memory module is built to withstand rigorous operating conditions and maintain data integrity.

Package

The MT47H128M16RT-25E:C TR is available in a compact and standardized package, ensuring compatibility with a wide range of electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and reliably, enhancing the overall performance of electronic devices.

Packaging/Quantity

The MT47H128M16RT-25E:C TR is typically packaged individually or in bulk quantities, depending on customer requirements.

Specifications

• Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
• Organization: 128 Megabits x 16 bits
• Operating Voltage: 2.5V
• Speed Grade: 25E
• Refresh Rate: 8K cycles/32ms
• Interface: Double Data Rate (DDR) SDRAM
• Pin Count: 60 pins
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VSS
38. BA0
39. BA1
40. RAS#
41. CAS#
42. WE#
43. CS#
44. CKE
45. CK
46. VSS
47. DM0
48. DM1
49. VCCQ
50. VREF
51. VSS
52. ODT
53. VSS
54. RESET#
55. VSS
56. VDD
57. VDD
58. VDD
59. VDD
60. VSS

Functional Features

• High-speed data transfer: The MT47H128M16RT-25E:C TR offers fast read and write operations, enabling efficient data processing.
• Error correction: This memory module incorporates error correction techniques to ensure data integrity and reliability.
• Auto-refresh capability: The product automatically refreshes stored data at regular intervals, preventing data loss due to decay.

Advantages and Disadvantages

Advantages

• High-speed operation enhances overall system performance.
• Large storage capacity accommodates a wide range of data-intensive applications.
• Low power consumption prolongs battery life in portable devices.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Limited compatibility with older devices that do not support DDR SDRAM technology.
• Relatively higher cost compared to other memory options.

Working Principles

The MT47H128M16RT-25E:C TR operates based on the principles of synchronous dynamic random access memory (SDRAM). It utilizes a clock signal to synchronize data transfers between the memory module and the host device. The data is stored in capacitors within the memory cells, which are periodically refreshed to maintain data integrity.

Detailed Application Field Plans

The MT47H128M16RT-25E:C TR is widely used in various electronic devices and systems, including: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

1. MT47H64M16