MT47H512M4EB-3:C

Product Overview

Category

MT47H512M4EB-3:C belongs to the category of semiconductor memory products.

Use

This product is primarily used as a dynamic random-access memory (DRAM) module in various electronic devices and systems.

Characteristics

• High-speed data transfer capabilities
• Large storage capacity
• Low power consumption
• Compact form factor
• Reliable performance

Package

MT47H512M4EB-3:C is typically packaged in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of this product lies in its ability to provide fast and efficient data storage and retrieval for electronic devices.

Packaging/Quantity

MT47H512M4EB-3:C is usually sold in individual units or in bulk packaging, depending on the customer's requirements.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 512 Megabytes (MB)
• Organization: 4 Megabits x 16
• Speed: 1333 Megatransfers per second (MT/s)
• Voltage: 1.5 Volts
• Operating Temperature Range: -40°C to +85°C
• RoHS Compliance: Yes

Detailed Pin Configuration

The pin configuration of MT47H512M4EB-3:C is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A10
21. A9
22. A11
23. BA0
24. BA1
25. A8
26. A7
27. A6
28. A5
29. A4
30. A3
31. A2
32. A1
33. A0
34. VSS
35. WE#
36. CAS#
37. RAS#
38. CS#
39. CKE
40. CK

Functional Features

• High-speed data transfer rate for improved system performance.
• Low power consumption, making it suitable for battery-powered devices.
• Error correction capabilities to ensure data integrity.
• Auto-refresh and self-refresh modes for efficient power management.
• On-die termination (ODT) for improved signal integrity.

Advantages and Disadvantages

Advantages

• Fast data transfer speed enhances overall system performance.
• Large storage capacity allows for storing a significant amount of data.
• Low power consumption prolongs battery life in portable devices.
• Compact form factor enables easy integration into various electronic systems.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Limited compatibility with older systems that do not support DDR3 memory.
• Higher cost compared to older generation memory technologies.
• Vulnerable to data loss in case of power failure without proper backup mechanisms.

Working Principles

MT47H512M4EB-3:C operates based on the principles of dynamic random-access memory (DRAM). It stores data in capacitors within its memory cells, which need to be periodically refreshed to maintain the stored information. When the system requires access to specific data, the memory controller sends appropriate signals to retrieve or store the required information.

Detailed Application Field Plans

MT47H512M4EB-3:C finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Networking equipment - Gaming consoles - Mobile devices - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to MT47H512M4EB-3:C are: - MT47H256M8EB-3:C - MT47H1G16EB-3:C - MT47H128M16RT-25E:A

These models offer different capacities, organizations, or speeds, providing flexibility to meet specific system requirements.

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