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MT47H64M8B6-3:D TR
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MT47H64M8B6-3:D TR

Basic Information Overview

  • Category: Memory module
  • Use: Storage and retrieval of digital information in electronic devices
  • Characteristics:
    • High capacity
    • Fast data transfer rate
    • Low power consumption
  • Package: Integrated circuit (IC)
  • Essence: Non-volatile memory storage
  • Packaging/Quantity: Typically sold in trays or reels containing multiple units

Specifications

  • Model: MT47H64M8B6-3:D TR
  • Capacity: 64 megabits (8 megabytes)
  • Organization: 8 banks of 8 megabits each
  • Speed: 3 nanoseconds (access time)
  • Voltage: 3.3 volts
  • Interface: Synchronous Dynamic Random Access Memory (SDRAM)
  • Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT47H64M8B6-3:D TR memory module has a total of 66 pins, which are arranged as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VSS
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. VSS
  29. A8
  30. A9
  31. A10
  32. A11
  33. A12
  34. A13
  35. A14
  36. A15
  37. VSS
  38. BA0
  39. BA1
  40. RAS#
  41. CAS#
  42. WE#
  43. CS#
  44. CKE
  45. VSS
  46. DQM0
  47. DQM1
  48. DM0
  49. DM1
  50. VSS
  51. CLK
  52. VSS
  53. VDD
  54. VDD
  55. VSS
  56. VSS
  57. VSS
  58. VSS
  59. VSS
  60. VSS
  61. VSS
  62. VSS
  63. VSS
  64. VSS
  65. VSS
  66. VSS

Functional Features

  • High-speed data transfer: The MT47H64M8B6-3:D TR memory module offers fast access times, allowing for efficient storage and retrieval of digital information.
  • Low power consumption: It is designed to operate with low power requirements, making it suitable for battery-powered devices.
  • Multiple banks: The memory module is organized into eight banks, providing flexibility in accessing different sections of stored data.

Advantages and Disadvantages

Advantages: - High capacity: With a capacity of 64 megabits, the MT47H64M8B6-3:D TR can store a large amount of data. - Fast data transfer rate: The module's high-speed performance enables quick data access and processing. - Low power consumption: Its energy-efficient design helps prolong battery life in portable devices.

Disadvantages: - Limited compatibility: The module may not be compatible with all electronic devices due to variations in interface and voltage requirements. - Relatively small storage size: While 64 megabits is sufficient for many applications, it may not meet the needs of certain memory-intensive tasks.

Working Principles

The MT47H64M8B6-3:D TR memory module operates based on synchronous dynamic random access memory (SDRAM) technology. It stores digital information in an array of capacitors, with each capacitor representing a single bit of data. The module uses clock signals to synchronize data transfers and employs row and column addressing techniques to access specific memory locations.

Detailed Application Field Plans

The MT47H64M8B6-3:D TR memory module finds application in various electronic devices, including: 1. Personal computers 2. Laptops and notebooks 3. Servers 4. Networking equipment 5. Mobile phones and tablets 6. Consumer electronics

Detailed and Complete Alternative Models

  1. MT47H128M8BT-3: A higher capacity variant with 128 megabits (16 megabytes) of storage.
  2. MT47H32M16HR-25E: A lower capacity variant with 32 megabits (4 megabytes) but higher speed and extended temperature range. 3

Καταγράψτε 10 συνήθεις ερωτήσεις και απαντήσεις που σχετίζονται με την εφαρμογή του MT47H64M8B6-3:D TR σε τεχνικές λύσεις

Sure! Here are 10 common questions and answers related to the application of MT47H64M8B6-3:D TR in technical solutions:

  1. Question: What is the capacity of the MT47H64M8B6-3:D TR memory module?
    Answer: The MT47H64M8B6-3:D TR has a capacity of 512 megabytes (MB).

  2. Question: What is the operating voltage range for this memory module?
    Answer: The operating voltage range for the MT47H64M8B6-3:D TR is 2.5V to 2.75V.

  3. Question: What is the clock frequency supported by this memory module?
    Answer: The MT47H64M8B6-3:D TR supports a clock frequency of 333 MHz.

  4. Question: Is this memory module compatible with DDR2 or DDR3 systems?
    Answer: The MT47H64M8B6-3:D TR is compatible with DDR2 systems.

  5. Question: Can I use multiple MT47H64M8B6-3:D TR modules together in a system?
    Answer: Yes, you can use multiple modules together to increase the overall memory capacity.

  6. Question: What is the CAS latency of the MT47H64M8B6-3:D TR memory module?
    Answer: The CAS latency of this module is 6 cycles.

  7. Question: Does this memory module support ECC (Error Correction Code)?
    Answer: No, the MT47H64M8B6-3:D TR does not support ECC.

  8. Question: What is the form factor of this memory module?
    Answer: The MT47H64M8B6-3:D TR follows the Small Outline DIMM (SODIMM) form factor.

  9. Question: Can I use this memory module in a laptop or notebook computer?
    Answer: Yes, the SODIMM form factor makes it suitable for laptops and notebooks.

  10. Question: Is this memory module RoHS compliant?
    Answer: Yes, the MT47H64M8B6-3:D TR is RoHS (Restriction of Hazardous Substances) compliant.

Please note that these answers are based on general information about the MT47H64M8B6-3:D TR memory module. It's always recommended to refer to the specific datasheet or consult the manufacturer for detailed technical specifications and compatibility information.