N25Q064A13ESF40F TR

Basic Information Overview

• Category: Non-volatile Memory
• Use: Data storage and retrieval
• Characteristics:
  • High-speed performance
  • Large storage capacity
  • Low power consumption
• Package: SOP8 (Small Outline Package)
• Essence: Flash memory chip
• Packaging/Quantity: Tape and Reel, 2500 units per reel

Specifications

• Memory Capacity: 64 Megabits (8 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Time:
  • Sector Erase: 100 milliseconds
  • Chip Erase: 1.5 seconds
  • Page Program: 0.7 milliseconds
• Data Retention: 20 years

Detailed Pin Configuration

The N25Q064A13ESF40F TR has the following pin configuration:

| Pin Name | Description | |----------|-------------| | VCC | Power supply voltage (2.7V to 3.6V) | | GND | Ground | | HOLD | Suspends ongoing operations | | WP | Write Protect | | SIO0 | Serial data input/output | | SIO1 | Serial data output | | SIO2 | Serial data input/output | | SIO3 | Serial data input/output | | CS | Chip Select |

Functional Features

• High-speed read and write operations
• Flexible erase options (sector or chip erase)
• Efficient programming of individual memory pages
• Hardware and software protection mechanisms
• Low power consumption in standby mode
• Fast data transfer using the SPI interface

Advantages

• High-performance flash memory with large storage capacity
• Low power consumption, suitable for battery-powered devices
• Reliable data retention for long periods
• Easy integration into existing systems using the SPI interface
• Flexible erase and programming options

Disadvantages

• Limited write endurance compared to other memory technologies
• Relatively higher cost per bit compared to traditional hard drives

Working Principles

The N25Q064A13ESF40F TR is based on the NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on its floating gate. The memory cells are accessed using the Serial Peripheral Interface (SPI), allowing for high-speed data transfer between the chip and the host device.

Detailed Application Field Plans

The N25Q064A13ESF40F TR is widely used in various electronic devices that require non-volatile memory for data storage and retrieval. Some common application fields include: - Consumer electronics (smartphones, tablets, digital cameras) - Automotive systems (infotainment, navigation, engine control units) - Industrial automation (programmable logic controllers, robotics) - Networking equipment (routers, switches, network attached storage)

Detailed and Complete Alternative Models

• N25Q032A13EF840E TR: 32 Megabit (4 Megabyte) capacity, same package and interface as N25Q064A13ESF40F TR.
• N25Q128A13EF840E TR: 128 Megabit (16 Megabyte) capacity, same package and interface as N25Q064A13ESF40F TR.
• N25Q256A13EF840E TR: 256 Megabit (32 Megabyte) capacity, same package and interface as N25Q064A13ESF40F TR.

Note: These alternative models offer different storage capacities while maintaining compatibility with the N25Q064A13ESF40F TR in terms of package and interface.

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