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MRF8S19140HSR3
Product Overview
The MRF8S19140HSR3 belongs to the category of RF Power Transistors and is designed for use in high-power amplifiers for industrial, scientific, and medical (ISM) applications. This transistor exhibits high power gain, efficiency, and ruggedness, making it suitable for various RF power amplification needs. The package type is a NI-1230H, and it is essential for enabling high-frequency signal amplification in electronic devices. The packaging includes one unit per package.
Specifications
- Frequency Range: 1.93 - 2.17 GHz
- Output Power: 140 W
- Gain: 15 dB
- Efficiency: 55%
- Package Type: NI-1230H
- Quantity: 1 unit per package
Detailed Pin Configuration
The MRF8S19140HSR3 features a detailed pin configuration with specific pins allocated for input, output, biasing, and grounding. These pins are crucial for ensuring proper connectivity and functionality within the circuitry.
Functional Features
- High Power Gain: Enables efficient signal amplification.
- Ruggedness: Withstands harsh operating conditions.
- Broad Frequency Range: Suitable for diverse RF applications.
Advantages and Disadvantages
Advantages
- High power gain
- Wide frequency range
- Rugged design
Disadvantages
- Limited to specific frequency range
- Higher cost compared to lower power transistors
Working Principles
The MRF8S19140HSR3 operates based on the principles of RF power amplification, where it takes low-power input signals and amplifies them to higher power levels suitable for transmission or further processing.
Detailed Application Field Plans
This transistor is ideal for use in ISM applications, including industrial heating systems, scientific instrumentation, and medical equipment requiring high-power RF amplification. It can also be employed in radar systems, communication equipment, and other RF-based applications.
Detailed and Complete Alternative Models
- MRF8S18120HR3: Operating in the 1.81 - 1.88 GHz frequency range with an output power of 120 W.
- MRF8S21140HSR5: Covering the 2.11 - 2.17 GHz frequency range with an output power of 140 W.
In conclusion, the MRF8S19140HSR3 RF Power Transistor offers high performance and reliability for various high-power RF amplification needs, making it a valuable component in ISM applications and beyond.
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What is the MRF8S19140HSR3?
- The MRF8S19140HSR3 is a high-power RF transistor designed for use in applications such as base stations, wireless infrastructure, and other RF power amplification systems.
What is the maximum output power of the MRF8S19140HSR3?
- The MRF8S19140HSR3 has a maximum output power of 140 watts.
What frequency range does the MRF8S19140HSR3 cover?
- The MRF8S19140HSR3 covers a frequency range of 1805-1880 MHz.
What are the key features of the MRF8S19140HSR3?
- Some key features of the MRF8S19140HSR3 include high power gain, high efficiency, and excellent linearity.
What are the typical applications for the MRF8S19140HSR3?
- Typical applications for the MRF8S19140HSR3 include cellular base stations, repeaters, and other wireless infrastructure systems.
What is the recommended operating voltage for the MRF8S19140HSR3?
- The recommended operating voltage for the MRF8S19140HSR3 is 28 volts.
Does the MRF8S19140HSR3 require external matching networks?
- Yes, the MRF8S19140HSR3 requires external matching networks for optimal performance.
What thermal management considerations should be taken into account when using the MRF8S19140HSR3?
- Proper heat sinking and thermal management are crucial for maintaining the reliability and performance of the MRF8S19140HSR3.
Is the MRF8S19140HSR3 RoHS compliant?
- Yes, the MRF8S19140HSR3 is RoHS compliant, meaning it meets the Restriction of Hazardous Substances directive.
Where can I find detailed application notes and reference designs for the MRF8S19140HSR3?
- Detailed application notes and reference designs for the MRF8S19140HSR3 can be found on the manufacturer's website or through authorized distributors.