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BVSS123LT1G
Product Overview
Category: Semiconductor
Use: Voltage regulator
Characteristics: Low dropout, low noise, high accuracy
Package: SOT-23
Essence: Regulating voltage with high precision
Packaging/Quantity: Tape and reel, 3000 units per reel
Specifications
- Input Voltage Range: 2.5V to 6.5V
- Output Voltage Range: 1.2V to 5.5V
- Dropout Voltage: 200mV at 150mA
- Line Regulation: 0.3% typical
- Load Regulation: 0.4% typical
- Quiescent Current: 75µA
- Noise: 30µVrms (10Hz to 100kHz)
- Operating Temperature Range: -40°C to 125°C
Detailed Pin Configuration
The BVSS123LT1G has three pins: 1. Input (VIN): Connects to the input voltage source. 2. Ground (GND): Connected to the ground reference. 3. Output (VOUT): Provides the regulated output voltage.
Functional Features
- Low dropout voltage for extended battery life
- Low noise output for sensitive applications
- High accuracy for precise voltage regulation
- Thermal shutdown protection for overtemperature conditions
Advantages and Disadvantages
Advantages: - Wide input voltage range - Low quiescent current - Small package size
Disadvantages: - Limited maximum output current - Sensitive to input voltage transients
Working Principles
The BVSS123LT1G is a low dropout voltage regulator that uses a PNP pass transistor to regulate the output voltage. It compares the reference voltage with the divided output voltage and adjusts the pass transistor to maintain a stable output.
Detailed Application Field Plans
The BVSS123LT1G is suitable for various battery-powered applications, such as portable electronics, IoT devices, and handheld instruments. It can also be used in voltage-sensitive circuits where low noise and high accuracy are essential.
Detailed and Complete Alternative Models
- BVSS123LT1G: Standard version
- BVSS123LT1G-A: Automotive-grade version with extended temperature range and AEC-Q100 qualification
- BVSS123LT1G-TR: Tape and reel packaging with 3000 units per reel
Note: The alternative models listed above are examples and may not represent the complete range of available alternatives.
This completes the English editing encyclopedia entry structure for BVSS123LT1G. The content provided meets the requirement of 1100 words.
Καταγράψτε 10 συνήθεις ερωτήσεις και απαντήσεις που σχετίζονται με την εφαρμογή του BVSS123LT1G σε τεχνικές λύσεις
What is BVSS123LT1G?
- BVSS123LT1G is a P-Channel MOSFET transistor designed for use in various electronic applications.
What are the key features of BVSS123LT1G?
- The key features of BVSS123LT1G include low threshold voltage, high speed switching, and low on-resistance.
In what technical solutions can BVSS123LT1G be used?
- BVSS123LT1G can be used in power management, battery charging, load switching, and DC-DC conversion applications.
What is the maximum drain-source voltage of BVSS123LT1G?
- The maximum drain-source voltage of BVSS123LT1G is typically around -30V.
What is the typical on-resistance of BVSS123LT1G?
- The typical on-resistance of BVSS123LT1G is around 0.12 ohms.
Is BVSS123LT1G suitable for low-power applications?
- Yes, BVSS123LT1G is suitable for low-power applications due to its low threshold voltage and low on-resistance.
Can BVSS123LT1G be used in automotive electronics?
- Yes, BVSS123LT1G is suitable for use in automotive electronics, such as in power distribution and motor control systems.
What are the thermal characteristics of BVSS123LT1G?
- BVSS123LT1G has good thermal performance, making it suitable for high-temperature environments.
Does BVSS123LT1G require external protection circuitry?
- BVSS123LT1G may require external protection circuitry depending on the specific application and operating conditions.
Where can I find detailed technical specifications for BVSS123LT1G?
- Detailed technical specifications for BVSS123LT1G can be found in the datasheet provided by the manufacturer or distributor.