VND10N06-1

Basic Information Overview

• Category: Electronic Component
• Use: Power MOSFET
• Characteristics: High voltage, low on-resistance, fast switching speed
• Package: TO-252 (DPAK)
• Essence: Transistor
• Packaging/Quantity: Tape and reel, 2500 pieces per reel

Specifications

• Drain-Source Voltage (VDS): 60V
• Continuous Drain Current (ID): 10A
• On-Resistance (RDS(on)): 0.1Ω
• Gate Threshold Voltage (VGS(th)): 2V - 4V
• Total Gate Charge (Qg): 18nC
• Input Capacitance (Ciss): 800pF
• Output Capacitance (Coss): 200pF
• Reverse Transfer Capacitance (Crss): 150pF

Detailed Pin Configuration

The VND10N06-1 power MOSFET has three pins: 1. Pin 1: Gate (G) 2. Pin 2: Drain (D) 3. Pin 3: Source (S)

Functional Features

• High voltage capability allows for use in various applications requiring higher voltage handling.
• Low on-resistance minimizes power losses and improves efficiency.
• Fast switching speed enables quick response times in switching applications.

Advantages

• Suitable for high voltage applications up to 60V.
• Low on-resistance reduces power dissipation and improves overall system efficiency.
• Fast switching speed ensures efficient operation in high-frequency switching circuits.

Disadvantages

• Relatively high input capacitance may require additional circuitry for effective gate control.
• Limited current handling capacity compared to some other power MOSFETs available in the market.

Working Principles

The VND10N06-1 is a power MOSFET that operates based on the principle of field-effect. When a suitable voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals. By varying the gate voltage, the resistance between the drain and source can be controlled, allowing for efficient switching and regulation of power in electronic circuits.

Detailed Application Field Plans

The VND10N06-1 power MOSFET finds applications in various fields, including: 1. Power supplies and converters 2. Motor control circuits 3. Lighting systems 4. Audio amplifiers 5. Battery charging circuits

Detailed and Complete Alternative Models

1. VND10N06-2: Similar specifications with a higher drain-source voltage rating of 100V.
2. VND10N06-3: Similar specifications with a lower on-resistance of 0.08Ω.
3. VND10N06-4: Similar specifications with a higher continuous drain current rating of 15A.

Note: The above alternative models are provided as examples and may not cover all available options in the market.

This entry provides an overview of the VND10N06-1 power MOSFET, including its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.