UCC27325DR

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Driver for high-speed, high-side and low-side MOSFETs and IGBTs
• Characteristics:
  • High-speed operation
  • Low propagation delay
  • Wide operating voltage range
  • High output current capability
• Package: SOIC (Small Outline Integrated Circuit)
• Essence: The UCC27325DR is a high-speed dual MOSFET and IGBT driver designed to provide efficient switching performance in various applications.
• Packaging/Quantity: Available in reels of 2500 units.

Specifications

• Supply Voltage Range: 4.5V to 18V
• Output Current: ±4A
• Propagation Delay: 15ns (typical)
• Rise/Fall Time: 8ns (typical)
• Operating Temperature Range: -40°C to +125°C

Detailed Pin Configuration

The UCC27325DR has the following pin configuration:

1. VDD: Power supply input
2. IN_A: Input for controlling the A side MOSFET or IGBT
3. GND: Ground reference
4. OUT_A: Output for the A side MOSFET or IGBT
5. VSS: Negative power supply input
6. IN_B: Input for controlling the B side MOSFET or IGBT
7. GND: Ground reference
8. OUT_B: Output for the B side MOSFET or IGBT

Functional Features

• Dual independent channels for driving high-side and low-side switches
• Adaptive shoot-through protection to prevent cross-conduction
• Integrated under-voltage lockout (UVLO) protection
• Schmitt-trigger inputs for noise immunity
• Enable input for device control
• Fast rise and fall times for efficient switching

Advantages and Disadvantages

Advantages: - High-speed operation allows for efficient switching - Wide operating voltage range provides flexibility in various applications - High output current capability enables driving of high-power MOSFETs and IGBTs - Adaptive shoot-through protection prevents damaging cross-conduction

Disadvantages: - Requires external components for proper operation - Limited to a specific package type (SOIC)

Working Principles

The UCC27325DR is designed to drive high-side and low-side MOSFETs or IGBTs in power electronics applications. It utilizes a dual-channel architecture, allowing independent control of each switch. The device incorporates adaptive shoot-through protection, which prevents both the high-side and low-side switches from being on simultaneously, avoiding damaging cross-conduction.

The inputs of the UCC27325DR are Schmitt-triggered, providing noise immunity and ensuring reliable operation even in noisy environments. The device also features an under-voltage lockout (UVLO) function, which disables the outputs when the supply voltage falls below a certain threshold, protecting the connected switches from improper operation.

Detailed Application Field Plans

The UCC27325DR is commonly used in various applications, including:

1. Motor Control: The driver can be utilized in motor control systems to efficiently drive high-power MOSFETs or IGBTs, enabling precise control of motor speed and direction.
2. Power Supplies: The UCC27325DR can be employed in power supply circuits to drive switches that regulate the output voltage, ensuring efficient power conversion.
3. Inverters: Inverter systems, such as those used in renewable energy generation or electric vehicle applications, can benefit from the high-speed switching capabilities of the UCC27325DR to achieve efficient power conversion.

Detailed and Complete Alternative Models

Some alternative models to the UCC27325DR include:

1. UCC27211: Dual MOSFET and IGBT driver with similar features and performance characteristics.
2. IRS2113: High-speed dual MOSFET driver with integrated shoot-through protection.
3. MAX44246: Dual high-speed MOSFET driver with adaptive shoot-through protection and wide operating voltage range.

These alternative models offer similar functionality and can be considered as substitutes for the UCC27325DR in various applications.

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