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SI2307CDS-T1-GE3
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SI2307CDS-T1-GE3

Product Overview

Category

The SI2307CDS-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in various electronic circuits and applications where efficient power management and switching capabilities are required.

Characteristics

  • Low on-resistance
  • High current handling capability
  • Fast switching speed
  • Low gate drive voltage
  • Enhanced thermal performance

Package

The SI2307CDS-T1-GE3 is typically available in a compact and industry-standard SOT-23 package.

Essence

This MOSFET is essential for optimizing power efficiency and control in electronic devices and systems.

Packaging/Quantity

It is usually supplied in reels with a specific quantity per reel, typically 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): [specification]
  • Continuous Drain Current (ID): [specification]
  • On-Resistance (RDS(ON)): [specification]
  • Gate-Source Voltage (VGS): [specification]
  • Operating Temperature Range: [specification]

Detailed Pin Configuration

The SI2307CDS-T1-GE3 features a standard SOT-23 pin configuration with clearly defined drain, source, and gate terminals. Refer to the datasheet for precise pinout details.

Functional Features

  • Efficient power management
  • Reliable switching performance
  • Low power dissipation
  • Compatibility with low-voltage control signals

Advantages

  • High efficiency
  • Compact form factor
  • Suitable for low-power applications
  • Enhanced thermal characteristics

Disadvantages

  • Limited current handling capacity compared to larger MOSFETs
  • Higher on-resistance than some high-power MOSFETs

Working Principles

The SI2307CDS-T1-GE3 operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

  • Battery management systems
  • DC-DC converters
  • Power supply units
  • Motor control circuits
  • LED lighting systems

Detailed and Complete Alternative Models

  • SI2308BDS-T1-GE3
  • SI2312CDS-T1-GE3
  • SI2335DDS-T1-GE3
  • Consult the manufacturer's catalog for a comprehensive list of alternative models.

In conclusion, the SI2307CDS-T1-GE3 power MOSFET offers a balance of performance, size, and efficiency, making it suitable for a wide range of electronic applications requiring power management and switching capabilities.

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Καταγράψτε 10 συνήθεις ερωτήσεις και απαντήσεις που σχετίζονται με την εφαρμογή του SI2307CDS-T1-GE3 σε τεχνικές λύσεις

  1. What is the maximum drain-source voltage of SI2307CDS-T1-GE3?

    • The maximum drain-source voltage is 20V.

  2. What is the continuous drain current of SI2307CDS-T1-GE3?

    • The continuous drain current is 4.3A.

  3. What is the on-resistance of SI2307CDS-T1-GE3?

    • The on-resistance is typically 25mΩ at Vgs=10V.

  4. What is the gate threshold voltage of SI2307CDS-T1-GE3?

    • The gate threshold voltage is typically 1.5V.

  5. What are the typical applications for SI2307CDS-T1-GE3?

    • Typical applications include load and power switches, battery management, and portable electronics.

  6. What is the operating temperature range of SI2307CDS-T1-GE3?

    • The operating temperature range is -55°C to 150°C.

  7. Is SI2307CDS-T1-GE3 suitable for automotive applications?

    • Yes, it is suitable for automotive applications.

  8. Does SI2307CDS-T1-GE3 have built-in ESD protection?

    • Yes, it has built-in ESD protection.

  9. What is the package type of SI2307CDS-T1-GE3?

    • It comes in a SOT-23 package.

  10. Is SI2307CDS-T1-GE3 RoHS compliant?

    • Yes, it is RoHS compliant.