The SI7430DP-T1-GE3 is a power MOSFET belonging to the category of discrete semiconductor products. This component is widely used in various electronic applications due to its unique characteristics and performance.
The SI7430DP-T1-GE3 features the following specifications: - Drain-Source Voltage (Vdss): 30V - Continuous Drain Current (Id): 8A - Rds On (Max) @ Id, Vgs: 10 mOhm @ 8A, 10V - Gate-Source Voltage (Vgs): ±20V - Input Capacitance (Ciss): 1600pF - Power Dissipation (Pd): 2.5W
The pin configuration of SI7430DP-T1-GE3 is as follows: - Pin 1 (G): Gate - Pin 2 (D): Drain - Pin 3 (S): Source
The functional features of SI7430DP-T1-GE3 include: - High efficiency power management - Fast switching speed for improved performance - Low on-resistance for reduced power loss
The SI7430DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing the gate voltage to control the flow of current between the drain and source terminals. By modulating the gate-source voltage, the device can efficiently manage power flow in electronic circuits.
The SI7430DP-T1-GE3 finds extensive application in various fields, including: - Power supplies - Motor control - LED lighting - Battery management systems
For applications requiring alternative models, the following options can be considered: - SI7469DP-T1-GE3 - SI7456DP-T1-GE3 - SI7483DP-T1-GE3
In conclusion, the SI7430DP-T1-GE3 power MOSFET offers high efficiency and fast switching speed, making it an ideal choice for diverse electronic applications.
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What is the maximum continuous drain current for SI7430DP-T1-GE3?
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