Vishay Siliconix
Η εικόνα μπορεί να είναι αναπαράσταση.
Δείτε τις προδιαγραφές για λεπτομέρειες προϊόντος.
SIHB22N60S-E3
Δείτε Λεπτομέρειες Φύλλα δεδομένων

SIHB22N60S-E3

Product Overview

Category

The SIHB22N60S-E3 belongs to the category of power semiconductor devices.

Use

It is used for high-power applications such as motor drives, inverters, and power supplies.

Characteristics

  • High voltage and current capability
  • Low on-state resistance
  • Fast switching speed
  • High reliability

Package

The SIHB22N60S-E3 is typically available in a TO-220AB package.

Essence

This product is essential for efficient power management in various electronic systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Voltage Rating: 600V
  • Current Rating: 22A
  • RDS(ON): 0.19Ω
  • Gate Charge: 40nC
  • Diode Forward Current: 22A
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHB22N60S-E3 has a standard TO-220AB pin configuration: 1. Source 2. Gate 3. Drain

Functional Features

  • High voltage and current handling capacity
  • Low conduction and switching losses
  • Enhanced thermal performance

Advantages

  • Efficient power management
  • Suitable for high-power applications
  • Reliable and durable

Disadvantages

  • Higher cost compared to lower-rated devices
  • Requires proper heat sinking for optimal performance

Working Principles

The SIHB22N60S-E3 operates based on the principles of field-effect transistors, utilizing its high voltage and current capabilities to control power flow in electronic circuits.

Detailed Application Field Plans

The SIHB22N60S-E3 is ideal for use in: - Motor drives for electric vehicles - Industrial inverters - Uninterruptible power supplies (UPS) - Renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the SIHB22N60S-E3 include: - IRF840 - STP22NE10L - FDPF22N10

In conclusion, the SIHB22N60S-E3 is a high-performance power semiconductor device suitable for demanding applications that require efficient power management and reliable operation.

[Word count: 336]

Καταγράψτε 10 συνήθεις ερωτήσεις και απαντήσεις που σχετίζονται με την εφαρμογή του SIHB22N60S-E3 σε τεχνικές λύσεις

  1. What is the maximum drain-source voltage of SIHB22N60S-E3?

    • The maximum drain-source voltage of SIHB22N60S-E3 is 600V.

  2. What is the continuous drain current rating of SIHB22N60S-E3?

    • The continuous drain current rating of SIHB22N60S-E3 is 22A.

  3. What is the on-state resistance (RDS(on)) of SIHB22N60S-E3?

    • The on-state resistance (RDS(on)) of SIHB22N60S-E3 is typically 0.19 ohms.

  4. Can SIHB22N60S-E3 be used in high-frequency switching applications?

    • Yes, SIHB22N60S-E3 is suitable for high-frequency switching applications.

  5. What is the gate threshold voltage of SIHB22N60S-E3?

    • The gate threshold voltage of SIHB22N60S-E3 is typically 4V.

  6. Is SIHB22N60S-E3 RoHS compliant?

    • Yes, SIHB22N60S-E3 is RoHS compliant.

  7. What is the operating temperature range of SIHB22N60S-E3?

    • The operating temperature range of SIHB22N60S-E3 is -55°C to 150°C.

  8. Does SIHB22N60S-E3 require a heatsink for certain applications?

    • Yes, a heatsink may be required for high-power or high-temperature applications.

  9. What are the typical applications for SIHB22N60S-E3?

    • Typical applications for SIHB22N60S-E3 include motor drives, power supplies, and inverters.

  10. Is SIHB22N60S-E3 suitable for automotive applications?

    • Yes, SIHB22N60S-E3 is suitable for automotive applications, such as electric vehicle power systems.