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NCP5109BDR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High and Low Side, 200 V

NCP5109BDR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High and Low Side, 200 V
Αριθμός ανταλλακτικού
NCP5109BDR2G
Κατηγορία
Power Chip > Gate Driver IC
Κατασκευαστής/Μάρκα
onsemi (Ansemi)
Ενθυλάκωση
SOIC-8
Συσκευασία
taping
Αριθμός πακέτων
2500
Περιγραφή
The NCP5109 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
Αίτημα παράθεσης
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Σε απόθεμα 81488 PCS
Στοιχεία επικοινωνίας
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Λέξεις-κλειδιά του NCP5109BDR2G
NCP5109BDR2G ΗΛΕΚΤΡΟΝΙΚΑ ΕΞΑΡΤΗΜΑΤΑ
NCP5109BDR2G Εκπτώσεις
NCP5109BDR2G Προμηθευτής
NCP5109BDR2G Διανομέας
NCP5109BDR2G Πίνακας δεδομένων
NCP5109BDR2G Φωτογραφίες
NCP5109BDR2G Τιμή
NCP5109BDR2G Προσφορά
NCP5109BDR2G ΧΑΜΗΛΟΤΕΡΗ ΤΙΜΗ
NCP5109BDR2G Αναζήτηση
NCP5109BDR2G Αγοραστικός
NCP5109BDR2G Chip